Flexoelectric effect is an effect widely existing in solid materials, including dielectric, semiconductor, conductor and two-dimensional materials, especially for ultra-thin materials (which can produce greater deflection). Considering that functional oxide thin films are of great potential for many applications like flexible … See more BTO films were grown on single-layer graphene-covered Ge substrates with surface orientations of (001) and (011). The graphene monolayers were directly … See more In order to further investigate the surface passivation role of graphene monolayer, the 90 nm-thick BTO films directly grown on Ge (011) substrates using exactly the … See more From the heteroepitaxy point of view, it is of great interest to understand the growth mode and the strain relaxation of remote epitaxial BTO3-δ films on Ge (011). … See more Considering that the van der Waals force existing at the interface of BTO3-δ/graphene/Ge is rather weak, the potential of the exfoliation of remote epitaxial BTO3-δ … See more WebThe transferred BTO3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but …
Nanomaterials Free Full-Text Epitaxial Growth of Ordered In …
WebOct 12, 2016 · The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. ... Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a ... WebMay 30, 2024 · Highly heterogeneous epitaxy of flexoelectric BaTiO membrane on Ge By Liyan Dai Nature.com 8 hours ago The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. simpsons predictions 2020
Heterogeneous Integration of Freestanding Bilayer Oxide …
WebJun 14, 2024 · In this study, we develop a mixed finite element method (FEM) for the study of problems with both strain gradient elasticity (SGE) and flexoelectricity being taken into account. To use C 0 continuous elements in mixed FEM, the kinematic relationship between displacement field and its gradient is enforced by Lagrangian multipliers. Besides, four ... WebSep 13, 2024 · Flexoelectric effects very much superior to piezoelectric effect. It is a universal electromechanical coupling effect which is allowed in all semiconductors and dielectrics, but piezoelectricity is allowed only in non-centro symmetric crystals. WebMar 19, 2024 · Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si … simpsons predictions 2022 queen elizabeth